CHANANA, R. K. Interrelated Channel Current and Oxide Leakage Current Density in a MOSFET Device. European Journal of Applied Sciences, [S. l.], v. 12, n. 5, p. 21–22, 2024. DOI: 10.14738/aivp.125.17525. Disponível em: http://116.203.177.230/index.php/AIVP/article/view/17525. Acesso em: 24 nov. 2024.