CHANANA, R. K. The Electron and Hole Effective Masses in Thermal Silicon Dioxide Determined from the Perspective of a Semiconductor. Transactions on Engineering and Computing Sciences, [S. l.], v. 11, n. 4, p. 172–174, 2023. DOI: 10.14738/tecs.114.15367. Disponível em: http://116.203.177.230/index.php/TMLAI/article/view/15367. Acesso em: 23 nov. 2024.